Modelo: MODULO IGBT SK15DGDL126ET
MODULO IGBT SK15DGDL126ET..
R$350,00
Modelo: MODULO IGBT MG100Q2YS1
MODULO IGBT MG100Q2YS1 - TOSHIBA..
R$600,00
Modelo: MODULO IGBT IXSN35N120U1
IGBT de 38 A, 1200 V, N-CANAL..
R$210,00
Modelo: GT50J322
GT50J322, IGBT DO CANAL N DO TRANSISTOR BIPOLAR DE GATE BIPOLAR DE PORTA ISOLADA..
R$45,00
Modelo: 40N60-NPFD
40N60NPFD - 40A, 600V, IGBT, Transistor1. 40A, 600V, VCE(sat)(typ.)=1.8V@IC=40A2. Low conduction loss3. Fast switching4. High input impedanceAbsolute maximum ratings ( Ta=25°C )1. Collector to Emitter Voltage : VCE = 600 V2. Gate to Emitter Voltage : VGE = ±20 V3..
R$35,00