40N60-NPFD

40N60NPFD - 40A, 600V, IGBT, Transistor

1. 40A, 600V, VCE(sat)(typ.)=1.8V@IC=40A

2. Low conduction loss

3. Fast switching

4. High input impedance

Absolute maximum ratings ( Ta=25°C )

1. Collector to Emitter Voltage : VCE = 600 V

2. Gate to Emitter Voltage : VGE = ±20 V

3. Collector Current : Ic = 80 A

4. Pulsed Collector Current : ICM = 120 A

5. Maximum Power Dissipation (TC=25°C) : PD = 290 W

6. Operating Junction Temperature TJ -55～+175 °C

7. Storage Temperature Range Tstg -55～+175 °C