TRANSISTORES

STD4NK50ZD - MOSFET N-CH 500V 3A DPAK/TO252..

Canal N 75V - 3,5mΩ - 120A - MOSFET de potência D2PAK STripFET..

JFET P-channel Transistor 30V 350mW Smt (sot23-3)..

SS8550 PNP; bipolar; 40V; 1,5A; 1W; TO92..

RGT30NS65D IGBT - TO263Tipo de canal IGBT: canal NDissipação máxima de energia (Pc), W: 66Tensão máxima do coletor-emissor | Vce |, V: 650Tensão de saturação do coletor-emissor | Vcesat |, V: 1,65Tensão máxima do emissor-porta | Veg |, V: 30Corrente máxima do coletor | Ic |, ..

RFD14N05L (to251aa/ipak)Logic Level, N-Channel Power Mosfets·ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 50 V VGS Gate-Source Voltage-Continuous ±10 V ID Drain Current-Continuous 14 A PD Total Dissipation @TC=25? 48 W Tj Max. Operating Junction Temp..

PN2907-A..

PN2907 (smd-sot23)..

MUR860-G..

MR4010 - IGBT..

MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 120 Vdc Collector−Base Voltage VCBO 140 Vdc Emitter−Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 150 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = ..

MPSA 56..